We report the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in nanostructured gold films above the electrical percolation and in strong-coupling regime, from room down to cryogenic temperatures (24 K). Nanostructured continuous gold films are assembled by supersonic cluster beam deposition of Au aggregates formed in the gas phase. The structure of the cluster-assembled films is characterized by an extremely high density of randomly oriented crystalline nanodomains, separated by grain boundaries and with a large number of lattice defects. Our data indicates that space charge limited conduction and Coulomb blockade are at the origin of the anomalous electrical behavior. The high density of extended defects and grain boundaries causes the localization of conduction electrons over the entire investigated temperature range.

Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films / M. Mirigliano, S. Radice, A. Falqui, A. Casu, F. Cavaliere, P. Milani. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - 10:1(2020), pp. 19613.1-19613.10.

Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films

M. Mirigliano
Primo
;
A. Falqui;A. Casu;F. Cavaliere;P. Milani
Ultimo
2020

Abstract

We report the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in nanostructured gold films above the electrical percolation and in strong-coupling regime, from room down to cryogenic temperatures (24 K). Nanostructured continuous gold films are assembled by supersonic cluster beam deposition of Au aggregates formed in the gas phase. The structure of the cluster-assembled films is characterized by an extremely high density of randomly oriented crystalline nanodomains, separated by grain boundaries and with a large number of lattice defects. Our data indicates that space charge limited conduction and Coulomb blockade are at the origin of the anomalous electrical behavior. The high density of extended defects and grain boundaries causes the localization of conduction electrons over the entire investigated temperature range.
English
Settore FIS/03 - Fisica della Materia
Articolo
Esperti anonimi
Pubblicazione scientifica
2020
Nature Research
10
1
19613
1
10
10
Pubblicato
Periodico con rilevanza internazionale
scopus
Aderisco
info:eu-repo/semantics/article
Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films / M. Mirigliano, S. Radice, A. Falqui, A. Casu, F. Cavaliere, P. Milani. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - 10:1(2020), pp. 19613.1-19613.10.
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Prodotti della ricerca::01 - Articolo su periodico
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262
Article (author)
si
M. Mirigliano, S. Radice, A. Falqui, A. Casu, F. Cavaliere, P. Milani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/804914
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