We have investigated the first stages of the room-temperature oxidation of the Si(100) surface combining experimental surface optical spectra with the results of ab initio calculations. High-resolution reflectance anisotropy spectra (RAS) and surface differential reflectance spectra (SDRS) have been measured for the clean surfaces and various exposures up to 183 L, which have been compared with calculated RAS and SDRS in the independent-particle approximation. Our results, yielding a consistent description of both RAS and SDRS, suggest the coexistence of different structural domains, whose weight changes smoothly with the oxygen exposure. The main oxidation mechanisms together with their occurrence versus coverage are discussed.
Optical spectra and microscopic structure of the oxidized Si(100) surface : combined in situ optical experiments and first principles calculations / K. Gaál-Nagy, A. Incze, G. Onida, Y. Borensztein, N. Witkowski, O. Pluchery, F. Fuchs, F. Bechsted, R. Del Sole. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 79:4(2009), pp. 045312.045312.1-045312.045312.10.
Optical spectra and microscopic structure of the oxidized Si(100) surface : combined in situ optical experiments and first principles calculations
K. Gaál-NagyPrimo
;G. Onida;
2009
Abstract
We have investigated the first stages of the room-temperature oxidation of the Si(100) surface combining experimental surface optical spectra with the results of ab initio calculations. High-resolution reflectance anisotropy spectra (RAS) and surface differential reflectance spectra (SDRS) have been measured for the clean surfaces and various exposures up to 183 L, which have been compared with calculated RAS and SDRS in the independent-particle approximation. Our results, yielding a consistent description of both RAS and SDRS, suggest the coexistence of different structural domains, whose weight changes smoothly with the oxygen exposure. The main oxidation mechanisms together with their occurrence versus coverage are discussed.Pubblicazioni consigliate
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