The electrical properties of cluster-assembled nanostructured palladium oxide (ns-PdOx) thin films grown by supersonic cluster beam deposition have been characterized by means of a customized ac current-sensing atomic force microscope. Scanning impedance microscopy is shown to provide a deep picture of the electrical properties of thin nanostructured interfaces even in the case of very soft and poorly adherent films. In particular, the dielectric constant of ns-PdOx can be quantitatively determined as well as its I-V characteristics. Moreover, the measurement of the tip-sample parasitic capacitance can be exploited to probe the overall mesoscale conductive character of thin films and to give a complementary and more precise view of the oxidation of ns-PdOx obtained by x-ray photoemission spectroscopy.
|Titolo:||Nanoscale electrical properties of cluster-assembled palladium oxide thin films|
|Parole Chiave:||Atomic force microscopy ; nanostructured materials ; palladium compounds ; permittivity ; thin films ; X-ray photoelectron spectra|
|Settore Scientifico Disciplinare:||Settore FIS/01 - Fisica Sperimentale|
Settore FIS/03 - Fisica della Materia
|Data di pubblicazione:||2009|
|Digital Object Identifier (DOI):||10.1103/PhysRevB.79.115422|
|Appare nelle tipologie:||01 - Articolo su periodico|