Monochromatic X and gamma rays are a standard calibration tool for semiconductor detector. For finely segmented pixel detectors, like the ones foreseen for HL-LHC detector upgrades, the single pixel spectrum is affected by charge sharing across nearby pixels, due to diffusion and the finite range of photoelectrons, resulting in a low energy continuum below the photoelectric peak. In this paper a systematic simulation study will be presented. The shape of the transition between the photoelectric peak and the continuum is determined by diffusion and needs to be unfolded for a correct estimation of the energy resolution. Simulation results are compared with data collected with different high-resistivity CMOS devices with 50 × 250 μm2 pixel size and photon energies between 13 and 60 keV. They show a good agreement, highlighting the potential usage of the whole single pixel spectrum to derive device characteristics.

Charge sharing of single photons in finely segmented pixel detectors / S. Monzani, A. Andreazza, M. Citterio, P. Fontana, M. Ianna, T. Lari, V. Liberali, F. Ragusa, C. Sbarra, A. Sidoti, A. Stabile. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 936(2019 Aug 21), pp. 722-723. [Epub ahead of print] [10.1016/j.nima.2018.09.096]

Charge sharing of single photons in finely segmented pixel detectors

A. Andreazza
Secondo
;
M. Citterio;V. Liberali;F. Ragusa;A. Stabile
2019-08-21

Abstract

Monochromatic X and gamma rays are a standard calibration tool for semiconductor detector. For finely segmented pixel detectors, like the ones foreseen for HL-LHC detector upgrades, the single pixel spectrum is affected by charge sharing across nearby pixels, due to diffusion and the finite range of photoelectrons, resulting in a low energy continuum below the photoelectric peak. In this paper a systematic simulation study will be presented. The shape of the transition between the photoelectric peak and the continuum is determined by diffusion and needs to be unfolded for a correct estimation of the energy resolution. Simulation results are compared with data collected with different high-resistivity CMOS devices with 50 × 250 μm2 pixel size and photon energies between 13 and 60 keV. They show a good agreement, highlighting the potential usage of the whole single pixel spectrum to derive device characteristics.
detectors; HV-CMOS; LHC; pixel detectors; semiconductor detectors; tTracking detectors
Settore FIS/01 - Fisica Sperimentale
Settore ING-INF/01 - Elettronica
2018
Article (author)
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2434/610115
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