Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones.
Dielectric Breakdown and Avalanches at Nonequilibrium Metal-Insulator Transitions / A. Shekhawat, S. Papanikolaou, S. Zapperi, J. Sethna. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 107:27(2011 Dec 28), pp. 276401.1-276401.5.
Dielectric Breakdown and Avalanches at Nonequilibrium Metal-Insulator Transitions
S. Zapperi;
2011
Abstract
Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones.File | Dimensione | Formato | |
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