We studied the feasibility of monolithic silicon-germanium front-ends for cryogenic semiconductor detectors. In this framework we designed and simulated a low-noise Charge Sensitive Preamplifier for High Purity Germanium detectors using the Austria Micro System S35 silicon-germanium technology. The preamplifier uses two silicon-germanium Hetero-junction Bipolar Transistors, a few silicon Metal-Oxide-Silicon Field-Effect Transistors, and an external silicon Junction Field-Effect Transistor. It is designed for gamma-ray spectroscopy performance at liquid-argon temperature, and exploits the full functionality at cryogenic temperatures of silicon-germanium Bipolar Transistors. Single-channel and four-channel versions are being realized.

VLSI cryogenic front-end for HPGe detectors based on a silicon-germanium technology / A. Pullia, F. Zocca, M. Citterio - In: 2010 IEEE Nuclear science symposium and medical imaging conference record (2010 NSS/MIC), Knoxville, TN, USA, 30 Oct.-6 Nov. 2010Piscataway, NJ : IEEE, 2010. - ISBN 978-1-4244-9106-3. - pp. 1340-1342 (( convegno IEEE Nuclear science symposium and medical imaging conference tenutosi a Knoxville, TN, USA nel 2010 [10.1109/NSSMIC.2010.5873987].

VLSI cryogenic front-end for HPGe detectors based on a silicon-germanium technology

A. Pullia
Primo
;
F. Zocca
Secondo
;
M. Citterio
Ultimo
2010

Abstract

We studied the feasibility of monolithic silicon-germanium front-ends for cryogenic semiconductor detectors. In this framework we designed and simulated a low-noise Charge Sensitive Preamplifier for High Purity Germanium detectors using the Austria Micro System S35 silicon-germanium technology. The preamplifier uses two silicon-germanium Hetero-junction Bipolar Transistors, a few silicon Metal-Oxide-Silicon Field-Effect Transistors, and an external silicon Junction Field-Effect Transistor. It is designed for gamma-ray spectroscopy performance at liquid-argon temperature, and exploits the full functionality at cryogenic temperatures of silicon-germanium Bipolar Transistors. Single-channel and four-channel versions are being realized.
Settore ING-INF/01 - Elettronica
Settore FIS/01 - Fisica Sperimentale
2010
Book Part (author)
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/198558
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 1
social impact