Titanium dioxide is characterized by chemical and structural stability, non-toxicity and cheapness, representing one of the most important oxide used in a variety of innovative applications, such as photovoltaic solar cells, gas sensors, photoelectrodes, and decontamination of aqueous and atmospheric environment. With a 3.0–3.2 eV band-gap, TiO2 absorbs relatively little of the solar spectrum, and many attempts have been done to shift the absorption edge to longer wavelength. Among these, doping of titania with non metals has attracted considerable attention due to its reported activity in the visible light. The N-doped TiO2 seems to be the most promising among all the so-called second generation photocatalysts. In this work pure and nitrogen-doped titania samples were synthesized by sol–gel method, at a controlled pH, and then calcinated at 400°C.6 Titanium (IV) isopropoxide was used as the starting material and triethylamine as the organic nitrogen source, in a variable amount (N/Ti initial molar ratio: 0.1-0.5). By coupling structural (by X-ray synchrotron radiation) and morphological (HRTEM, BET, granulometry) characterizations the presence of defects, edge dislocations and surface states is appreciated and found to affect the material reactivity. The flat-band potential (FB) of pure and nitrogen-doped nanotitania thin films, prepared in our laboratory, have been determined by the capacitance method, based on Mott-Schottky plots. The electrochemical flat-band data are compared with optical band-gap determination. 1. G.

N-doped TiO2 semiconductor nanoparticles. Bulk, surface and electrochemical features / F. Spadavecchia, S. Ardizzone, G. Cappelletti, L. Falciola, M. Leoni, P. Scardi. ((Intervento presentato al 39. convegno Congresso Nazionale di Chimica Fisica (CF2010) tenutosi a Stresa nel 2010.

N-doped TiO2 semiconductor nanoparticles. Bulk, surface and electrochemical features

F. Spadavecchia;S. Ardizzone;G. Cappelletti;L. Falciola;
2010

Abstract

Titanium dioxide is characterized by chemical and structural stability, non-toxicity and cheapness, representing one of the most important oxide used in a variety of innovative applications, such as photovoltaic solar cells, gas sensors, photoelectrodes, and decontamination of aqueous and atmospheric environment. With a 3.0–3.2 eV band-gap, TiO2 absorbs relatively little of the solar spectrum, and many attempts have been done to shift the absorption edge to longer wavelength. Among these, doping of titania with non metals has attracted considerable attention due to its reported activity in the visible light. The N-doped TiO2 seems to be the most promising among all the so-called second generation photocatalysts. In this work pure and nitrogen-doped titania samples were synthesized by sol–gel method, at a controlled pH, and then calcinated at 400°C.6 Titanium (IV) isopropoxide was used as the starting material and triethylamine as the organic nitrogen source, in a variable amount (N/Ti initial molar ratio: 0.1-0.5). By coupling structural (by X-ray synchrotron radiation) and morphological (HRTEM, BET, granulometry) characterizations the presence of defects, edge dislocations and surface states is appreciated and found to affect the material reactivity. The flat-band potential (FB) of pure and nitrogen-doped nanotitania thin films, prepared in our laboratory, have been determined by the capacitance method, based on Mott-Schottky plots. The electrochemical flat-band data are compared with optical band-gap determination. 1. G.
2010
Settore CHIM/02 - Chimica Fisica
N-doped TiO2 semiconductor nanoparticles. Bulk, surface and electrochemical features / F. Spadavecchia, S. Ardizzone, G. Cappelletti, L. Falciola, M. Leoni, P. Scardi. ((Intervento presentato al 39. convegno Congresso Nazionale di Chimica Fisica (CF2010) tenutosi a Stresa nel 2010.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/153945
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