Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
Opportunity of single atom control for quantum processing in silicon and diamond / T. Shinada, E. Prati, S. Tamura, T. Tanii, T. Teraji, S. Onoda, T. Ohshima, L.P. Mcguinness, L. Rogers, B. Naydenov, F. Jelezko, J. Isoya - In: 2014 Silicon Nanoelectronics Workshop (SNW)[s.l] : IEEE, 2014. - ISBN 978-1-4799-5676-0. - pp. 1-2 (( convegno Silicon Nanoelectronics Workshop tenutosi a Honolulu nel 2014 [10.1109/SNW.2014.7348533].
Opportunity of single atom control for quantum processing in silicon and diamond
E. PratiSecondo
;
2014
Abstract
Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
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