We explain variability observed for the resonant tunnelling transport through donors in scaled silicon nanowires by the influence of charge configuration changes at the edges between the channel and the source-drain regions. This charge configuration is remarkably robust with respect to ageing effects, thermal cycling and the associated Id-Vg characteristics at low temperature constitute a real "electro-fingerprint" for the samples. This stability is prerequisite for applications based on the gate control of single donor orbitals in nanoscale CMOS devices [1-2]
Sample variability and time stability in scaled silicon nanowires / M. Pierre, X. Jehl, R. Wacquez, M. Vinet, M. Sanquer, M. Belli, E. Prati, M. Fanciulli, J. Verduijn, G.C. Tettamanzi, G.P. Lansbergen, S. Rogge, M. Ruoff, M. Fleischer, Wharam, D, Kern, D - In: 2009 10th International Conference on Ultimate Integration of Silicon[s.l] : IEEE, 2009. - ISBN 978-1-4244-3704-7. - pp. 249-252 (( Intervento presentato al 10. convegno International Conference on Ultimate Integration on Silicon tenutosi a Aachen nel 2009 [10.1109/ULIS.2009.4897583].
Sample variability and time stability in scaled silicon nanowires
E. Prati;
2009
Abstract
We explain variability observed for the resonant tunnelling transport through donors in scaled silicon nanowires by the influence of charge configuration changes at the edges between the channel and the source-drain regions. This charge configuration is remarkably robust with respect to ageing effects, thermal cycling and the associated Id-Vg characteristics at low temperature constitute a real "electro-fingerprint" for the samples. This stability is prerequisite for applications based on the gate control of single donor orbitals in nanoscale CMOS devices [1-2]
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