In this work, both a theoretical study and experimental measurements are shown to describe the equivalent noise charge (ENC) contribution of the parallel √f noise of a charge-sensitive preamplifier in a nuclear spectroscopic chain. Previous works have demonstrated that this noise is produced by the distributed capacitive coupling to bulk of the preamplifiers' high-valued feedback resistors, which give rise to an resistive-capacitive (R-C) structure known in the literature as 'diffusive line.' The introduced noise is particularly evident when such devices are integrated in a chip using a polysilicon layer that has intrinsically high distributed capacitance to the chip's bulk. Different shaping amplifiers are taken into consideration (analog quasi-Gaussian, digital trapezoidal/triangular, and CR-RCn), and closed-form expressions of noise coefficients are given whenever possible.
Equivalent Noise Charge Contribution of the √f Parallel Noise in Nuclear Spectroscopic Measurements Using Different Shaping Amplifiers / S. Capra, G. Secci, A. Pullia. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 70:4(2023 Apr), pp. 730-736. [10.1109/TNS.2023.3259143]
Equivalent Noise Charge Contribution of the √f Parallel Noise in Nuclear Spectroscopic Measurements Using Different Shaping Amplifiers
S. Capra
Primo
;G. SecciPenultimo
;A. PulliaUltimo
2023
Abstract
In this work, both a theoretical study and experimental measurements are shown to describe the equivalent noise charge (ENC) contribution of the parallel √f noise of a charge-sensitive preamplifier in a nuclear spectroscopic chain. Previous works have demonstrated that this noise is produced by the distributed capacitive coupling to bulk of the preamplifiers' high-valued feedback resistors, which give rise to an resistive-capacitive (R-C) structure known in the literature as 'diffusive line.' The introduced noise is particularly evident when such devices are integrated in a chip using a polysilicon layer that has intrinsically high distributed capacitance to the chip's bulk. Different shaping amplifiers are taken into consideration (analog quasi-Gaussian, digital trapezoidal/triangular, and CR-RCn), and closed-form expressions of noise coefficients are given whenever possible.File | Dimensione | Formato | |
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