In this work, both a theoretical study and experimental measurements are shown to describe the equivalent noise charge (ENC) contribution of the parallel √f noise of a charge-sensitive preamplifier in a nuclear spectroscopic chain. Previous works have demonstrated that this noise is produced by the distributed capacitive coupling to bulk of the preamplifiers' high-valued feedback resistors, which give rise to an resistive-capacitive (R-C) structure known in the literature as 'diffusive line.' The introduced noise is particularly evident when such devices are integrated in a chip using a polysilicon layer that has intrinsically high distributed capacitance to the chip's bulk. Different shaping amplifiers are taken into consideration (analog quasi-Gaussian, digital trapezoidal/triangular, and CR-RCn), and closed-form expressions of noise coefficients are given whenever possible.

Equivalent Noise Charge Contribution of the √f Parallel Noise in Nuclear Spectroscopic Measurements Using Different Shaping Amplifiers / S. Capra, G. Secci, A. Pullia. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 70:4(2023 Apr), pp. 730-736. [10.1109/TNS.2023.3259143]

Equivalent Noise Charge Contribution of the √f Parallel Noise in Nuclear Spectroscopic Measurements Using Different Shaping Amplifiers

S. Capra
Primo
;
G. Secci
Penultimo
;
A. Pullia
Ultimo
2023

Abstract

In this work, both a theoretical study and experimental measurements are shown to describe the equivalent noise charge (ENC) contribution of the parallel √f noise of a charge-sensitive preamplifier in a nuclear spectroscopic chain. Previous works have demonstrated that this noise is produced by the distributed capacitive coupling to bulk of the preamplifiers' high-valued feedback resistors, which give rise to an resistive-capacitive (R-C) structure known in the literature as 'diffusive line.' The introduced noise is particularly evident when such devices are integrated in a chip using a polysilicon layer that has intrinsically high distributed capacitance to the chip's bulk. Different shaping amplifiers are taken into consideration (analog quasi-Gaussian, digital trapezoidal/triangular, and CR-RCn), and closed-form expressions of noise coefficients are given whenever possible.
Diffusive lines; distributed capacitance; electronic noise; nuclear spectroscopy;
Settore FIS/01 - Fisica Sperimentale
Settore FIS/04 - Fisica Nucleare e Subnucleare
Settore ING-INF/07 - Misure Elettriche e Elettroniche
Settore ING-IND/20 - Misure e Strumentazione Nucleari
apr-2023
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/974000
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