V2O3 presents a complex interrelationship between the metal–insulator transition and the structural rhombohedral-monoclinic one in temperature, as a function of sample thickness. Whilst in bulk V2O3 the two transitions coincide on the temperature scale, at 15 nm thickness a fully independent Mott-like transition occurs at lower temperature, with no corresponding structural changes perhaps related to epitaxial strain. It is therefore of relevance to investigate the thin and ultrathin film growth to pinpoint the chemical, electronic and structural phase phenomenology and the role of the interface with the substrate. Here we present results on the thickness dependent properties of V2O3 from 1 nm up to 40 nm thick as grown on c-plane Al2O3 substrates by exploiting variable sampling depth probes. The surface morphology of stoichiometric ultra-thin V2O3 layers evolves from islands-like to continuous flat film with thickness, with implications on the overall properties.

Chemical, structural and electronic properties of ultrathin V2O3 films on Al2O3 substrate: Implications in Mott-like transitions / V.P.S.K. Chaluvadi, D. Dagur, F. Mazzola, S. Punathum Chalil, A.Y. Petrov, J. Fujii, G. Panaccione, G. Rossi, P. Orgiani, G. Vinai, P. Torelli. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 610:(2022), pp. 155462.1-155462.7. [10.1016/j.apsusc.2022.155462]

Chemical, structural and electronic properties of ultrathin V2O3 films on Al2O3 substrate: Implications in Mott-like transitions

G. Rossi;
2022

Abstract

V2O3 presents a complex interrelationship between the metal–insulator transition and the structural rhombohedral-monoclinic one in temperature, as a function of sample thickness. Whilst in bulk V2O3 the two transitions coincide on the temperature scale, at 15 nm thickness a fully independent Mott-like transition occurs at lower temperature, with no corresponding structural changes perhaps related to epitaxial strain. It is therefore of relevance to investigate the thin and ultrathin film growth to pinpoint the chemical, electronic and structural phase phenomenology and the role of the interface with the substrate. Here we present results on the thickness dependent properties of V2O3 from 1 nm up to 40 nm thick as grown on c-plane Al2O3 substrates by exploiting variable sampling depth probes. The surface morphology of stoichiometric ultra-thin V2O3 layers evolves from islands-like to continuous flat film with thickness, with implications on the overall properties.
V2O3; Thin film; Ultrathin film; Morphology; Spectroscopy; Metal insulator transition
Settore FIS/03 - Fisica della Materia
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/944488
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