We present a polarization‐dependent Co K‐edge SEXAFS investigation on the local atomic geometry around Co atoms at the interface between epitaxial CoSi2 and Si(111). The Co interface atoms are found to be coordinated with eight Si atoms at CoSi2‐like bond lengths.
Atomic geometry at the CoSi2/Si (111) interface / A. Santaniello, P. Depadova, X. Jin, D. Chandesris, G. Rossi. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B: MICROELECTRONICS PROCESSING AND PHENOMENA. - ISSN 0734-211X. - 7:4(1989), p. 1017. [10.1116/1.584793]
Atomic geometry at the CoSi2/Si (111) interface
A. Santaniello;
1989
Abstract
We present a polarization‐dependent Co K‐edge SEXAFS investigation on the local atomic geometry around Co atoms at the interface between epitaxial CoSi2 and Si(111). The Co interface atoms are found to be coordinated with eight Si atoms at CoSi2‐like bond lengths.
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