We demonstrate the possibility to functionalize silicon vacancies through single ion implantation of Ge atoms, forming stable GeV complexes, to achieve position control of the defects and electronic properties suitable for room temperature operations. The quantum transport-measurements, supported by theoretical calculations, evidences differences compared to conventional dopants, concerning the effect of disorder and temperature on the conductivity.
Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies / S. Achilli, N.H. Le, G. Fratesi, N. Manini, G. Onida, M. Turchetti, G. Ferrari, T. Shinada, T. Tanii, E. Prati (IEEE SILICON NANOELECTRONICS WORKSHOP). - In: SNW[s.l] : Institute of Electrical and Electronics Engineers (IEEE), 2021. - ISBN 978-4-86348-781-9. - pp. 87-88 (( Intervento presentato al 26. convegno Silicon Nanoelectronics Workshop : June, 13th nel 2021 [10.1109/SNW51795.2021.00045].
Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies
S. AchilliPrimo
;G. Fratesi;N. Manini;G. Onida;E. Prati
Ultimo
2021
Abstract
We demonstrate the possibility to functionalize silicon vacancies through single ion implantation of Ge atoms, forming stable GeV complexes, to achieve position control of the defects and electronic properties suitable for room temperature operations. The quantum transport-measurements, supported by theoretical calculations, evidences differences compared to conventional dopants, concerning the effect of disorder and temperature on the conductivity.
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