Ge impurities in silicon generate deep donor states in the silicon bandgap. We demonstrate the single ion implantation of Ge ions in the channel of silicon transisteas and their electrical activation. Because of the deep donor ground state of Ge, we realize room temperature impurity bands. Our method enables us to create atomic scale conductive paths in silicon with no need of external gate voltages.
Single ion implantation of Ge donor impurity in silicon transistors / E. Prati, Y. Chiba, M. Yano, K. Kumagai, M. Hori, G. Ferrari, T. Shinada, Tanii, T (IEEE SILICON NANOELECTRONICS WORKSHOP). - In: 2015 Silicon Nanoelectronics Workshop (SNW) / [a cura di] IEEE. - [s.l] : IEEE, 2015. - ISBN 978-1-4673-7604-4. - pp. 1-2 (( convegno Silicon Nanoelectronics Workshop tenutosi a Kyoto nel 2015.
Single ion implantation of Ge donor impurity in silicon transistors
E. Prati
Primo
;
2015
Abstract
Ge impurities in silicon generate deep donor states in the silicon bandgap. We demonstrate the single ion implantation of Ge ions in the channel of silicon transisteas and their electrical activation. Because of the deep donor ground state of Ge, we realize room temperature impurity bands. Our method enables us to create atomic scale conductive paths in silicon with no need of external gate voltages.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
