Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D 0 and D - states; Hubbard band formation due to the inter-donor coupling.
Quantum transport in deterministically implanted single-donors in Si FETs / T. Shinada, M. Hori, F. Guagliardo, G. Ferrari, A. Komatubara, K. Kumagai, T. Tanii, T. Endo, Y. Ono, E. Prati (TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING). - In: 2011 International Electron Devices Meeting[s.l] : IEEE, 2011. - ISBN 978-145770505-2. - pp. 697-700 (( convegno International Electron Devices Meeting tenutosi a Washington nel 2011 [10.1109/IEDM.2011.6131644].
Quantum transport in deterministically implanted single-donors in Si FETs
E. Prati
Ultimo
2011
Abstract
Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D 0 and D - states; Hubbard band formation due to the inter-donor coupling.
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