We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised. The effect is explained by considering the time dependency of the transition probabilities due to a harmonic voltage generated by the microwave field that couples with the wires connecting the MOSFET. The RTS experimental data are in agreement with the prediction obtained with our model.
Microwave irradiation effects on random telegraph signal in a MOSFET / E. Prati, F. M., C. A., G. Ferrari, S. M.. - In: PHYSICS LETTERS A. - ISSN 0375-9601. - 370:5-6(2007 Oct 29), pp. 491-493. [10.1016/j.physleta.2007.05.086]
Microwave irradiation effects on random telegraph signal in a MOSFET
E. Prati
Primo
;
2007
Abstract
We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised. The effect is explained by considering the time dependency of the transition probabilities due to a harmonic voltage generated by the microwave field that couples with the wires connecting the MOSFET. The RTS experimental data are in agreement with the prediction obtained with our model.
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