Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.
Revisiting room-temperature 1.54 mu m photoluminescence of ErOx centers in silicon at extremely low concentration / E. Prati, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii (IEEE SILICON NANOELECTRONICS WORKSHOP). - In: 2017 Silicon Nanoelectronics Workshop (SNW)[s.l] : IEEE, 2017. - ISBN 978-4-8634-8647-8. - pp. 105-106 (( Intervento presentato al 22. convegno Silicon Nanoelectronics tenutosi a Kyoto nel 2017 [10.23919/SNW.2017.8242319].
Revisiting room-temperature 1.54 mu m photoluminescence of ErOx centers in silicon at extremely low concentration
E. Prati
Primo
;
2017
Abstract
Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.
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