It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to 4 I 13/2 → 4 I 15/2 transition of Er 3+ . A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.
Atom Probe Study of Erbium and Oxygen Co-Implanted Silicon / Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yan, Y. Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai (IEEE SILICON NANOELECTRONICS WORKSHOP). - In: 2017 Silicon Nanoelectronics Workshop (SNW)[s.l] : IEEE, 2017. - ISBN 978-4-8634-8647-8. - pp. 99-100 (( convegno Silicon Nanoelectronics tenutosi a Kyoto nel 2017 [10.23919/SNW.2017.8242316].
Atom Probe Study of Erbium and Oxygen Co-Implanted Silicon
E. Prati;
2017
Abstract
It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to 4 I 13/2 → 4 I 15/2 transition of Er 3+ . A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.
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