We switch the transport along different paths in a system constituted by a phosphorus donor in a silicon quantum dot in complementary metal-oxide-semiconductor technology, coupled with two donors at the source side. The standard Coulomb blockade pattern created by the transport through the D(0) neutral state of an individual donor located in the channel of the device is modified by two additional randomly diffused nearby donors. By varying the control voltages, the fin-field effect transistor acts as a quantum device which may be used to control alternative current paths through different donors.
Switching quantum transport in a three donors silicon fin-field effect transistor / G. Leti, E. Prati, M. Belli, G. Petretto, M. Fanciulli, M. Vinet, R. Wacquez, M. Sanquer. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 99:24(2011), pp. 242102.242102-1-242102.242102-5. [10.1063/1.3669702]
Switching quantum transport in a three donors silicon fin-field effect transistor
E. PratiSecondo
;
2011
Abstract
We switch the transport along different paths in a system constituted by a phosphorus donor in a silicon quantum dot in complementary metal-oxide-semiconductor technology, coupled with two donors at the source side. The standard Coulomb blockade pattern created by the transport through the D(0) neutral state of an individual donor located in the channel of the device is modified by two additional randomly diffused nearby donors. By varying the control voltages, the fin-field effect transistor acts as a quantum device which may be used to control alternative current paths through different donors.
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