We charge an individual donor quantum dot with an electron originally stored in another quantum dot in its proximity. The single arsenic donor quantum dot and the electrostatic quantum dot in parallel are contained in a silicon nanometric field effect transistor. Their different coupling capacitances with the control and back gates determine a honeycomb pattern at high control gate voltage. It is therefore possible to control the exchange coupling of an electron of the quantum dot with the electrons bound to the donor quantum dot toward the realization of a physical qubit for quantum information processing applications.

Adiabatic charge control in a single donor atom transistor / E. Prati, M. Belli, S. Cocco, G. Petretto, M. Fanciulli. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 98:5(2011 Jan 31), pp. 053109.053109-1-053109.053109-4. [10.1063/1.3551735]

Adiabatic charge control in a single donor atom transistor

E. Prati
Primo
;
2011

Abstract

We charge an individual donor quantum dot with an electron originally stored in another quantum dot in its proximity. The single arsenic donor quantum dot and the electrostatic quantum dot in parallel are contained in a silicon nanometric field effect transistor. Their different coupling capacitances with the control and back gates determine a honeycomb pattern at high control gate voltage. It is therefore possible to control the exchange coupling of an electron of the quantum dot with the electrons bound to the donor quantum dot toward the realization of a physical qubit for quantum information processing applications.
Settore FIS/03 - Fisica della Materia
31-gen-2011
4-feb-2011
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/908791
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