We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.

Compact silicon double and triple dots realized with only two gates / M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer, M. Vinet, E. Prati, M. Belli, M. Fanciulli. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 95:24(2009 Dec 14), pp. 242107.1-242107.4. [10.1063/1.3273857]

Compact silicon double and triple dots realized with only two gates

E. Prati;
2009

Abstract

We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.
Settore FIS/03 - Fisica della Materia
14-dic-2009
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/908789
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