The effect of the geometrical confinement on the shell filling in quantum dots obtained in silicon-on-insulator (SOI) tri-sided gate metal oxide semiconductor single-electron transistors (MOSSETs) is investigated on the basis of the current spin density functional theory. Variations of the geometric shape in nanowire SOI-MOSSETs with square section entail important changes in the valley filling sequences, whereas the variability of the gate length does not imply a significant modification of the filling patterns. Our results provide quantitative insights towards the shell engineering of silicon quantum dots for qubits with stable valley filling patterns.
Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation / M. De Michielis, E. Prati, M. Fanciulli, G. Fiori, G. Iannaccone. - In: APPLIED PHYSICS EXPRESS. - ISSN 1882-0778. - 5:12(2012), pp. 124001.1-124001.3. [10.1143/APEX.5.124001]
Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation
E. PratiSecondo
;
2012
Abstract
The effect of the geometrical confinement on the shell filling in quantum dots obtained in silicon-on-insulator (SOI) tri-sided gate metal oxide semiconductor single-electron transistors (MOSSETs) is investigated on the basis of the current spin density functional theory. Variations of the geometric shape in nanowire SOI-MOSSETs with square section entail important changes in the valley filling sequences, whereas the variability of the gate length does not imply a significant modification of the filling patterns. Our results provide quantitative insights towards the shell engineering of silicon quantum dots for qubits with stable valley filling patterns.Pubblicazioni consigliate
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