We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (∼ 4× 104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.
Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature / E. Prati, M. Celebrano, L. Ghirardini, M. Finazzi, G. Ferrari, T. Shinada, K. Gi, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii - In: 2019 Silicon Nanoelectronics Workshop (SNW)USA : IEEE, 2019. - ISBN 978-486348702-4. - pp. 1-2 (( Intervento presentato al 24. convegno Silicon Nanoelectronics Workshop tenutosi a Kyoto nel 2019 [10.23919/SNW.2019.8782962].
Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature
E. Prati
Primo
;
2019
Abstract
We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (∼ 4× 104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.Pubblicazioni consigliate
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