Strain in colloidal heteronanocrystals with non-centrosymmetric lattices presents a unique opportunity for controlling optoelectronic properties and adds a new degree of freedom to existing wavefunction engineering and doping paradigms. We synthesized wurtzite CdSe nanorods embedded in a thick CdS shell, hereby exploiting the large lattice mismatch between the two domains to generate a compressive strain of the CdSe core and a strong piezoelectric potential along its c-axis. Efficient charge separation results in an indirect ground-state transition with a lifetime of several microseconds, almost one order of magnitude longer than any other CdSe/CdS nanocrystal. Higher excited states recombine radiatively in the nanosecond time range, due to increasingly overlapping excited-state orbitals. k? p calculations confirm the importance of the anisotropic shape and crystal structure in the buildup of the piezoelectric potential. Strain engineering thus presents an efficient approach to highly tunable single- and multiexciton interactions, driven by a dedicated core/shell nanocrystal design.

Band structure engineering via piezoelectric fields in strained anisotropic CdSe/CdS nanocrystals / S. Christodoulou, F. Rajadell, A. Casu, G. Vaccaro, J.Q. Grim, A. Genovese, L. Manna, J.I. Climente, F. Meinardi, G. Raino, T. Stoferle, R.F. Mahrt, J. Planelles, S. Brovelli, I. Moreels. - In: NATURE COMMUNICATIONS. - ISSN 2041-1723. - 6:1(2015 Jul), pp. 7905.1-7905.8. [10.1038/ncomms8905]

Band structure engineering via piezoelectric fields in strained anisotropic CdSe/CdS nanocrystals

A. Casu;
2015

Abstract

Strain in colloidal heteronanocrystals with non-centrosymmetric lattices presents a unique opportunity for controlling optoelectronic properties and adds a new degree of freedom to existing wavefunction engineering and doping paradigms. We synthesized wurtzite CdSe nanorods embedded in a thick CdS shell, hereby exploiting the large lattice mismatch between the two domains to generate a compressive strain of the CdSe core and a strong piezoelectric potential along its c-axis. Efficient charge separation results in an indirect ground-state transition with a lifetime of several microseconds, almost one order of magnitude longer than any other CdSe/CdS nanocrystal. Higher excited states recombine radiatively in the nanosecond time range, due to increasingly overlapping excited-state orbitals. k? p calculations confirm the importance of the anisotropic shape and crystal structure in the buildup of the piezoelectric potential. Strain engineering thus presents an efficient approach to highly tunable single- and multiexciton interactions, driven by a dedicated core/shell nanocrystal design.
English
Settore FIS/03 - Fisica della Materia
Articolo
Esperti anonimi
Pubblicazione scientifica
lug-2015
Nature Publishing Group
6
1
7905
1
8
8
Pubblicato
Periodico con rilevanza internazionale
scopus
orcid
pubmed
crossref
wos
Aderisco
info:eu-repo/semantics/article
Band structure engineering via piezoelectric fields in strained anisotropic CdSe/CdS nanocrystals / S. Christodoulou, F. Rajadell, A. Casu, G. Vaccaro, J.Q. Grim, A. Genovese, L. Manna, J.I. Climente, F. Meinardi, G. Raino, T. Stoferle, R.F. Mahrt, J. Planelles, S. Brovelli, I. Moreels. - In: NATURE COMMUNICATIONS. - ISSN 2041-1723. - 6:1(2015 Jul), pp. 7905.1-7905.8. [10.1038/ncomms8905]
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S. Christodoulou, F. Rajadell, A. Casu, G. Vaccaro, J.Q. Grim, A. Genovese, L. Manna, J.I. Climente, F. Meinardi, G. Raino, T. Stoferle, R.F. Mahrt, J...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/904965
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