The exciting intrinsic properties discovered in single crystals of metal halide perovskites still await their translation into optoelectronic devices. The poor understanding and control of the crystallization process of these materials are current bottlenecks retarding the shift toward single-crystal-based optoelectronics. Here we theoretically and experimentally elucidate the role of surface tension in the rapid synthesis of perovskite single crystals by inverse temperature crystallization. Understanding the nucleation and growth mechanisms enabled us to exploit surface tension to direct the growth of monocrystalline films of perovskites (AMX3, where A = CH3NH3+ or MA; M = Pb2+, Sn2+ X = Br-, I-) on the solution surface. We achieve up to 1 cm2-sized monocrystalline films with thickness on the order of the charge carrier diffusion length (5-10 μm). Our work paves the way to control the crystallization process of perovskites, including thin-film deposition, which is essential to advance the performance benchmarks of perovskite optoelectronics.

The Role of Surface Tension in the Crystallization of Metal Halide Perovskites / A.A. Zhumekenov, V.M. Burlakov, M.I. Saidaminov, A. Alofi, M.A. Haque, B. Turedi, B. Davaasuren, I. Dursun, N. Cho, A.M. El-Zohry, M.D. Bastiani, A. Giugni, B. Torre, E.D. Fabrizio, O.F. Mohammed, A. Rothenberger, T. Wu, A. Goriely, O.M. Bakr. - In: ACS ENERGY LETTERS. - ISSN 2380-8195. - 2:8(2017 Aug 11), pp. 1782-1788. [10.1021/acsenergylett.7b00468]

The Role of Surface Tension in the Crystallization of Metal Halide Perovskites

A. Giugni;
2017

Abstract

The exciting intrinsic properties discovered in single crystals of metal halide perovskites still await their translation into optoelectronic devices. The poor understanding and control of the crystallization process of these materials are current bottlenecks retarding the shift toward single-crystal-based optoelectronics. Here we theoretically and experimentally elucidate the role of surface tension in the rapid synthesis of perovskite single crystals by inverse temperature crystallization. Understanding the nucleation and growth mechanisms enabled us to exploit surface tension to direct the growth of monocrystalline films of perovskites (AMX3, where A = CH3NH3+ or MA; M = Pb2+, Sn2+ X = Br-, I-) on the solution surface. We achieve up to 1 cm2-sized monocrystalline films with thickness on the order of the charge carrier diffusion length (5-10 μm). Our work paves the way to control the crystallization process of perovskites, including thin-film deposition, which is essential to advance the performance benchmarks of perovskite optoelectronics.
Metal Halide Perovskites; Crystallization; Surface Tension; optoelectronic devices; optoelectronic properties; monocrystalline films;
Settore FIS/03 - Fisica della Materia
Settore CHIM/02 - Chimica Fisica
11-ago-2017
6-lug-2017
Article (author)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/825675
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