We present here a study of Er doping of n +-type porous silicon. The samples were characterized in situ by their electrochemical behavior and ex situ by optical reflectivity and scanning electron microscopy (SEM). A clear correlation between the optical properties and the Er content of the samples is demonstrated. Refractive index dependence on Er content has also been obtained through simulations of reflectivity spectra in the 350-2500 nm range.
Optical, electrochemical, and structural properties of Er-doped porous silicon / G. Mula, S. Setzu, G. Manunza, R. Ruffilli, A. Falqui. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - 116:20(2012 May), pp. 11256-11260. [10.1021/jp301851h]
Optical, electrochemical, and structural properties of Er-doped porous silicon
A. FalquiUltimo
2012
Abstract
We present here a study of Er doping of n +-type porous silicon. The samples were characterized in situ by their electrochemical behavior and ex situ by optical reflectivity and scanning electron microscopy (SEM). A clear correlation between the optical properties and the Er content of the samples is demonstrated. Refractive index dependence on Er content has also been obtained through simulations of reflectivity spectra in the 350-2500 nm range.
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