Ion-gated transistors (IGTs) are attractive for chemo-and bio-sensing, wearable electronics, and bioelectronics, because of their ability to act as ion/electron converters and their low operating voltages (e.g., below 1 V). Metal oxides are of special interest as transistor channel materials in IGTs due to their high mobility, chemical stability, and the ease of processing in air at relatively low temperatures (<350 °C). Titanium dioxide is an abundant material that can be used as a channel material in n-type IGTs. In this work, we investigate the role of the morphology of the TiO2 channel (porous vs compact films) and the size of the cations in the gating media ([EMIM][TFSI] and [Li][TFSI] dissolved in [EMIM][TFSI]) to study their role on the electrical characteristics of IGTs. We found that both the film morphology and the type of gating medium highly affect the electrical response of the devices.
Ion-gated transistors based on porous and compact TiO2films: Effect of Li ions in the gating medium / A. Subramanian, B. George, S.R. Bobbara, I. Valitova, I. Ruggeri, F. Borghi, A. Podesta, P. Milani, F. Soavi, C. Santato, F. Cicoira. - In: AIP ADVANCES. - ISSN 2158-3226. - 10:6(2020 Jun 01).
|Titolo:||Ion-gated transistors based on porous and compact TiO2films: Effect of Li ions in the gating medium|
SUBRAMANIAN, AISHWARYA (Primo)
|Settore Scientifico Disciplinare:||Settore FIS/03 - Fisica della Materia|
|Data di pubblicazione:||1-giu-2020|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1063/5.0009984|
|Appare nelle tipologie:||01 - Articolo su periodico|
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