This paper presents the design of an SRAM cell in 28 nm, specifically designed to avoid metastability at start-up. Metastable operation is avoided by unbalancing the size of transistors. Extensive simulations have confirmed that the probability of metastable operation is greatly reduced.
Design of Non-Metastable SRAM Cells in 28 nm CMOS Technology / F. Crescioli, L. Frontini, V. Liberali, A. Stabile - In: 2019 IEEE 31st International Conference on Microelectronics (MIEL)[s.l] : IEEE, 2019. - ISBN 9781728134192. - pp. 243-246 (( Intervento presentato al 31. convegno IEEE International Conference on Microelectronics, MIEL tenutosi a Nis nel 2019 [10.1109/MIEL.2019.8889606].
Design of Non-Metastable SRAM Cells in 28 nm CMOS Technology
L. Frontini;V. Liberali;A. Stabile
2019
Abstract
This paper presents the design of an SRAM cell in 28 nm, specifically designed to avoid metastability at start-up. Metastable operation is avoided by unbalancing the size of transistors. Extensive simulations have confirmed that the probability of metastable operation is greatly reduced.
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