A new pn-CCD with an activa area of 3 × 1 cm2 was recently fabricated for ESA's X-ray Multi Mirror Mission (XMM). The front-end electronics has been integrated on the same chip as the detector, and its noise behaviour was investigated. X-rays from a 55Fe source have been used for the absolute calibration. The measured electronic Equivalent Noise Charge (ENC) of the on-chip amplifier was 8.8 e- at room temperature and 2.2 e- at the CCD operating temperature of 150 K. The improvements with respect to the last version with noise figures of 4.8 e- (at 150 K) are due to the reduction of the total input capacitance by a factor of 1.6, the improvement of the transistor transconductance by a factor of 2, and the reduction of 1 fhook noise because of the different p-well implant with a better thermal annealing.
The pn-CCD on-chip electronics / E. Pinotti, H. Brauninger, N. Findeis, H. Gorke, D. Hauff, P. Holl, J. Kemmer, P. Lechner, G. Lutz, W. Kink, N. Meidinger, G. Metzner, P. Predehl, C. Reppin, L. Struder, J. Trumper, C.v. Zanthier, E. Kendziorra, R. Staubert, V. Radeka, P. Rehak, G. Bertuccio, E. Gatti, A. Longoni, A. Pullia, M. Sampietro. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 326:1-2(1993), pp. 85-91. ((Intervento presentato al 6. convegno European symp on semiconductor detectors tenutosi a Milano nel 1992.
The pn-CCD on-chip electronics
A. Pullia;
1993
Abstract
A new pn-CCD with an activa area of 3 × 1 cm2 was recently fabricated for ESA's X-ray Multi Mirror Mission (XMM). The front-end electronics has been integrated on the same chip as the detector, and its noise behaviour was investigated. X-rays from a 55Fe source have been used for the absolute calibration. The measured electronic Equivalent Noise Charge (ENC) of the on-chip amplifier was 8.8 e- at room temperature and 2.2 e- at the CCD operating temperature of 150 K. The improvements with respect to the last version with noise figures of 4.8 e- (at 150 K) are due to the reduction of the total input capacitance by a factor of 1.6, the improvement of the transistor transconductance by a factor of 2, and the reduction of 1 fhook noise because of the different p-well implant with a better thermal annealing.
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