Radiation detectors built in high-voltage and high-resistivity CMOS technology are an interesting option for the large area pixel-trackers sought for the upgrade of the Large Hadron Collider experiments. A characterisation of the BCD8 technology by STMicroelectronics process has been performed to evaluate its suitability for the realisation of CMOS sensors with a depleted region of several tens of micrometer. Sensors featuring 50×250 μm2 pixels on a 125 Ωcm resistivity substrate have been characterized. The response to ionizing radiation is tested using radioactive sources and an X-ray tune, reading out the detector with an external spectroscopy chain. Irradiation tests were performed up to proton fluences exceeding 5⋅1015 p/cm2 and they show the depletion and breakdown voltages increases with irradiation. A hybridization process for capacitive coupling has been developed. Assemblies have been performed using the ATLAS FE-I4 readout ASIC and prototype CMOS sensors. Measurements show a planarity better than 1.5 μm peak-to-peak on the 5 mm length of the HV-CMOS chip. To evaluate more precisely the achievable uniformity dummy chips of FE-I4 sizes have been made on 6-inch wafers. The measurement of the 24 capacitors on each chip is expected to achieve a precise estimation of the real thickness uniformity. The goal is to achieve less then 10% variation on the glue thickness (∼0.5 μm).

Characterization of HV-CMOS detectors in BCD8 technology and of a controlled hybridization technique / E. Zaffaroni, A. Andreazza, A. Castoldi, V. Ceriale, G. Chiodini, M. Citterio, M. Dalla, G. Darbo, G. Gariano, A. Gaudiello, C. Guazzoni, V. Liberali, S. Passadore, F. Ragusa, A. Rovani, E. Ruscino, C. Sbarra, H. Shrimali, A. Sidoti, A. Stabile. - In: POS PROCEEDINGS OF SCIENCE. - ISSN 1824-8039. - 287(2017), pp. 063.1-063.7. ((Intervento presentato al 25. convegno International workshop on vertex detectors tenutosi a Isola d’Elba nel 2016.

Characterization of HV-CMOS detectors in BCD8 technology and of a controlled hybridization technique

A. Andreazza;V. Liberali;F. Ragusa;A. Stabile
2017

Abstract

Radiation detectors built in high-voltage and high-resistivity CMOS technology are an interesting option for the large area pixel-trackers sought for the upgrade of the Large Hadron Collider experiments. A characterisation of the BCD8 technology by STMicroelectronics process has been performed to evaluate its suitability for the realisation of CMOS sensors with a depleted region of several tens of micrometer. Sensors featuring 50×250 μm2 pixels on a 125 Ωcm resistivity substrate have been characterized. The response to ionizing radiation is tested using radioactive sources and an X-ray tune, reading out the detector with an external spectroscopy chain. Irradiation tests were performed up to proton fluences exceeding 5⋅1015 p/cm2 and they show the depletion and breakdown voltages increases with irradiation. A hybridization process for capacitive coupling has been developed. Assemblies have been performed using the ATLAS FE-I4 readout ASIC and prototype CMOS sensors. Measurements show a planarity better than 1.5 μm peak-to-peak on the 5 mm length of the HV-CMOS chip. To evaluate more precisely the achievable uniformity dummy chips of FE-I4 sizes have been made on 6-inch wafers. The measurement of the 24 capacitors on each chip is expected to achieve a precise estimation of the real thickness uniformity. The goal is to achieve less then 10% variation on the glue thickness (∼0.5 μm).
Settore ING-INF/01 - Elettronica
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2434/610570
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