This paper presents a new Content Addressable Memory (CAM) cell, designed in two variants (inverting and non-inverting), and optimized for power consumption. The cells are designed in 28 nm CMOS technology, using a fully-CMOS approach. If one of the bits in a word is not matching, the corresponding cell sends a "kill" signal to the cascaded cell to inhibit further switching. Thanks to this feature, the designed CAM array requires less than 0.7 fJ/bit per comparison. A prototype containing 2(17) words of 18 bits each has been fabricated and it has proven to be functional.
Design and Characterization of New Content Addressable Memory Cells / A. Annovi, L. Frontini, V. Liberali, A. Stabile (IEEE INTERNATIONAL CONFERENCE ON CIRCUITS AND SYSTEMS). - In: 2018 IEEE International Symposium on Circuits and Systems (ISCAS)[s.l] : IEEE, 2018 May. - ISBN 9781538648810. - pp. 1-5 (( convegno ISCAS tenutosi a Firenze nel 2018.
Titolo: | Design and Characterization of New Content Addressable Memory Cells |
Autori: | |
Settore Scientifico Disciplinare: | Settore ING-INF/01 - Elettronica |
Data di pubblicazione: | mag-2018 |
Enti collegati al convegno: | IEEE |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/ISCAS.2018.8351682 |
Tipologia: | Book Part (author) |
Appare nelle tipologie: | 03 - Contributo in volume |
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