Monolayers of Dy and Ho deposited on Si(111)7 à 7 surfaces and annealed at T > 600°C convert into epitaxial pseudo-disilicide interfaces which are terminated by extra silicon at the surface. Extended and core electron states are probed by synchrotron radiation photoemission and provide a chemical characterisation of there two-dimensional interfaces which have been recently found to display a very strong dichroism in X-ray absorption studies.
Ultrathin epitaxial rare-earth silicide interfaces on Si(111)7 Ã 7 / O. Sakho, F. Sirotti, M. Desantis, M. Sacchi, G. Rossi. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 56-58:Part 1(1992), pp. 568-571. ((Intervento presentato al 3. convegno International Conf on the formation of semiconductor interfaces ( ICFSI-3 ) tenutosi a Roma nel 1991.
Ultrathin epitaxial rare-earth silicide interfaces on Si(111)7 Ã 7
G. RossiUltimo
1992
Abstract
Monolayers of Dy and Ho deposited on Si(111)7 à 7 surfaces and annealed at T > 600°C convert into epitaxial pseudo-disilicide interfaces which are terminated by extra silicon at the surface. Extended and core electron states are probed by synchrotron radiation photoemission and provide a chemical characterisation of there two-dimensional interfaces which have been recently found to display a very strong dichroism in X-ray absorption studies.
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