Thermally induced Si accumulation onto Pd2Si surfaces has been studied for the first time with synchrotron radiation photoemission. Evidence is given of the formation of strong bonds between Si and Pd in the transition region between Pd2Si and Si. The results are discussed in view of the Pd-Si interfaces prepared by annealing in device technology.
Pd2Si surfaces thermally enriched in silicon: Evidence of new Si:Pd bonds / I. Abbati, G. Rossi, L. Braicovich, I. Lindau, W.E. Spicer, B. De Michelis. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 52:11(1981), pp. 6994-6996.
Pd2Si surfaces thermally enriched in silicon: Evidence of new Si:Pd bonds
G. RossiSecondo
;
1981
Abstract
Thermally induced Si accumulation onto Pd2Si surfaces has been studied for the first time with synchrotron radiation photoemission. Evidence is given of the formation of strong bonds between Si and Pd in the transition region between Pd2Si and Si. The results are discussed in view of the Pd-Si interfaces prepared by annealing in device technology.
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