Joint photoemission and Auger LVV line-shape spectroscopies on the Si-Cu interface show the existence of a silicidelike compound with bonding characteristics similar to those of the near-noble-metal silicides. This makes the Si-Cu interface different from the other noble-metal-Si interfaces where alloylike phases (Si-Au) or narrow interfaces with concentration gradients (Si-Ag) are formed. The Si-Cu compound is metal-rich with a stoichiometry close to the eutectic composition Cu3Si and is stable over a wide range of temperatures.
Compound formation and bonding configuration at the Si-Cu interface / G. Rossi, I. Lindau. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 28:6(1983), pp. 3597-3600.
Compound formation and bonding configuration at the Si-Cu interface
G. RossiPrimo
;
1983
Abstract
Joint photoemission and Auger LVV line-shape spectroscopies on the Si-Cu interface show the existence of a silicidelike compound with bonding characteristics similar to those of the near-noble-metal silicides. This makes the Si-Cu interface different from the other noble-metal-Si interfaces where alloylike phases (Si-Au) or narrow interfaces with concentration gradients (Si-Ag) are formed. The Si-Cu compound is metal-rich with a stoichiometry close to the eutectic composition Cu3Si and is stable over a wide range of temperatures.
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