A combined BIS-XPS study of the PdSi(111)7 × 7 interface formation is presented. A Pd2Si-like distribution of partial d density of empty states is found starting from the early stages of SiPd bond formation.
BIS investigation of Pdsingle bondSi(111)7 × 7 interface formation / J.Y. Veuillen, T.T. Nguyen, R. Cinti, S. D'Addato, S. Turchini, S. Nannarone, A. Santaniello, G. Rossi. - In: VACUUM. - ISSN 0042-207X. - 41:1-3(1990), pp. 702-704. ((Intervento presentato al convegno 11th International VACUUM Congress( ICV-11 )- 7th International Conf. on solid surface( ICSS-7 ) tenutosi a Cologne nel 1989.
BIS investigation of Pdsingle bondSi(111)7 × 7 interface formation
G. RossiUltimo
1990
Abstract
A combined BIS-XPS study of the PdSi(111)7 × 7 interface formation is presented. A Pd2Si-like distribution of partial d density of empty states is found starting from the early stages of SiPd bond formation.
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