We present Si 2p and Ba 4d photoemission with synchrotron radiation from Si(111)-Ba interface at increasing coverages from 0.2 to 4.4 monolayers. The interface is reactive with the formation of Ba-rich interface products showing a rather strong shift of Si 2p to lower binding emergies (∼ 1 eV). The results are discussed in connection with available information on Si-Ca and Si-rare earths interfaces.

Core photoemission study of the early formation stage of Si(111)-Ba interface / I. Abbati, L. Braicovich, U. Del Pennino, S. Nannarone, G. Rossi, I. Lindau. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 162:1-3(1985), pp. 645-650. [10.1016/0039-6028(85)90961-6]

Core photoemission study of the early formation stage of Si(111)-Ba interface

Rossi, G.;
1985

Abstract

We present Si 2p and Ba 4d photoemission with synchrotron radiation from Si(111)-Ba interface at increasing coverages from 0.2 to 4.4 monolayers. The interface is reactive with the formation of Ba-rich interface products showing a rather strong shift of Si 2p to lower binding emergies (∼ 1 eV). The results are discussed in connection with available information on Si-Ca and Si-rare earths interfaces.
Physical and Theoretical Chemistry; Condensed Matter Physics; Surfaces and Interfaces
Settore FIS/03 - Fisica della Materia
SURFACE SCIENCE
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2434/555232
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