The Sn/Si(111)-(3Ã3)R30° surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [G. Profeta and E. Tosatti, Phys. Rev. Lett. 98, 086401 (2007)].
Insulating ground state of Sn/Si(111)-(root 3x root 3)R30 degrees / S. Modesti, L. Petaccia, G. Ceballos, I. Vobornik, G. Panaccione, G. Rossi, L. Ottaviano, R. Larciprete, S. Lizzit, A. Goldoni. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 98:12(2007), pp. 126401.1-126401.4. [10.1103/PhysRevLett.98.126401]
Insulating ground state of Sn/Si(111)-(root 3x root 3)R30 degrees
G. Rossi;
2007
Abstract
The Sn/Si(111)-(3Ã3)R30° surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [G. Profeta and E. Tosatti, Phys. Rev. Lett. 98, 086401 (2007)].
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