The heteroepitaxy of InAs on a Te covered GaAs surface is investigated by photoelectron spectroscopy. Core-level spectra probed with synchrotron radiation show that Te remains at the interface between InAs and GaAs in a concentration much higher than the solubility limit of this element in III-V compounds, suggesting that a new compound is being formed. We propose that this interlayer is responsible for the observed changing in the growth mode of the InAs overlayer from islands to layer by layer.
Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface / W.N. Rodrigues, V.H. Etgens, M. Sauvage-Simkin, G. Rossi, F. Sirotti, R. Pinchaux, F. Rochet. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - 95:12(1995), pp. 873-877. [10.1016/0038-1098(95)00397-5]
Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface
G. Rossi;
1995
Abstract
The heteroepitaxy of InAs on a Te covered GaAs surface is investigated by photoelectron spectroscopy. Core-level spectra probed with synchrotron radiation show that Te remains at the interface between InAs and GaAs in a concentration much higher than the solubility limit of this element in III-V compounds, suggesting that a new compound is being formed. We propose that this interlayer is responsible for the observed changing in the growth mode of the InAs overlayer from islands to layer by layer.
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