We present a selection of data from the first spectroscopic investigation on the room temperature growth and annealing of the Si(111)7 à 7 Eu interface. A mixed interface is formed at RT for coverages 5 < θ < 15 monolayers, and it is then saturated by pure Eu overgrowth. Annealing produces a diluted Eu-Si mixture. Eu is in the divalent state in all cases. An intense constant kinetic energy electron emission feature at 10-12 eV, found for excitation energies larger than the 5p3 2core absorption threshold, is recognized as a fingerprint of metallic Eu.
The Si(111)-7 × 7 Eu interface investigated by means of electron spectroscopies / G. Rossi, J. Nogami, I. Lindau, J.J. Yeh. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 152-153:Part 2(1985), pp. 1247-1254. [10.1016/0039-6028(85)90545-X]
The Si(111)-7 × 7 Eu interface investigated by means of electron spectroscopies
G. RossiPrimo
;
1985
Abstract
We present a selection of data from the first spectroscopic investigation on the room temperature growth and annealing of the Si(111)7 à 7 Eu interface. A mixed interface is formed at RT for coverages 5 < θ < 15 monolayers, and it is then saturated by pure Eu overgrowth. Annealing produces a diluted Eu-Si mixture. Eu is in the divalent state in all cases. An intense constant kinetic energy electron emission feature at 10-12 eV, found for excitation energies larger than the 5p3 2core absorption threshold, is recognized as a fingerprint of metallic Eu.
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