Magnetization profile at the Fe/GaAs(001)-4 x 6 interface

The magnetization of a thin Fe film epitaxially grown on GaAs(001)-4 x 6 was studied at different depths from the metal/semiconductor interface using a single layer of Fe0.5Co0.5 as a marker layer through a double-wedge Fe film. By measuring the X-ray magnetic circular dichroism spectroscopy at the L-2.3 of Co, the magnetic response of the film could be sensed at different distances from the interface. Data show a reduction of the magnetization at the interface though the existence of a magnetically "dead" layer is completely ruled out. Moreover, the magnetization was found to be reduced at the Fe film surface.