The formation of the Cu/Si interface is described on the basis of joint photoemission (valence band and Si 2p core levels) and Auger lineshape (SiL2,3VV) analysis. The system is characterized by an extended mixed phase where a silicidelike compound of average stoichiometry Cu3Si is formed and appears to be stable for an extended range of Cu coverages and annealing temperatures. The intermixing is strongly temperature dependent, but the chemical reaction between Cu and the top layers of Si can proceed even at 100 K.
The Si(111)/Cu interface studied with surface sensitive techniques / G. Rossi, T. Kendelewicz, I. Lindau, W.E. Spicer. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS. - ISSN 0734-2101. - 1:2(1983), pp. 987-990. [10.1116/1.572019]
The Si(111)/Cu interface studied with surface sensitive techniques
G. RossiPrimo
;
1983
Abstract
The formation of the Cu/Si interface is described on the basis of joint photoemission (valence band and Si 2p core levels) and Auger lineshape (SiL2,3VV) analysis. The system is characterized by an extended mixed phase where a silicidelike compound of average stoichiometry Cu3Si is formed and appears to be stable for an extended range of Cu coverages and annealing temperatures. The intermixing is strongly temperature dependent, but the chemical reaction between Cu and the top layers of Si can proceed even at 100 K.
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