We present the SEXAFS determination of the room temperature chemisorption configuration for Co on Si(111)7Ã7, and of the local geometry of the annealed epitaxial CoSi2/Si(111)7Ã7 interface. The chemisorption is fully determined by the geometry of the 7Ã7 substrate, both on the unfaulted and stacking-faulted halves of the surface unit cell and the Co sites are not directly related to the epitaxial positions. We propose then a chemically-driven-concerted-atom-exchange (CDCE) mechanism for the transition from chemisorption of Co to epitaxy of CoSi2on Si(111) which explains the coexistence of type A and B epitaxy.
From the chemisorption of Co on Si(111)7×7 to the formation of epitaxial A and B-type CoSi2 / G. Rossi, A. Santaniello, P. De Padova. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - 73:12(1990), pp. 807-812.
Titolo: | From the chemisorption of Co on Si(111)7×7 to the formation of epitaxial A and B-type CoSi2 |
Autori: | |
Parole Chiave: | Materials Science (all); Condensed Matter Physics |
Settore Scientifico Disciplinare: | Settore FIS/03 - Fisica della Materia |
Data di pubblicazione: | 1990 |
Rivista: | |
Tipologia: | Article (author) |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/0038-1098(90)90135-X |
Appare nelle tipologie: | 01 - Articolo su periodico |