We present the SEXAFS determination of the room temperature chemisorption configuration for Co on Si(111)7Ã7, and of the local geometry of the annealed epitaxial CoSi2/Si(111)7Ã7 interface. The chemisorption is fully determined by the geometry of the 7Ã7 substrate, both on the unfaulted and stacking-faulted halves of the surface unit cell and the Co sites are not directly related to the epitaxial positions. We propose then a chemically-driven-concerted-atom-exchange (CDCE) mechanism for the transition from chemisorption of Co to epitaxy of CoSi2on Si(111) which explains the coexistence of type A and B epitaxy.
From the chemisorption of Co on Si(111)7×7 to the formation of epitaxial A and B-type CoSi2 / G. Rossi, A. Santaniello, P. De Padova. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - 73:12(1990), pp. 807-812.
From the chemisorption of Co on Si(111)7×7 to the formation of epitaxial A and B-type CoSi2
G. Rossi;A. Santaniello;
1990
Abstract
We present the SEXAFS determination of the room temperature chemisorption configuration for Co on Si(111)7Ã7, and of the local geometry of the annealed epitaxial CoSi2/Si(111)7Ã7 interface. The chemisorption is fully determined by the geometry of the 7Ã7 substrate, both on the unfaulted and stacking-faulted halves of the surface unit cell and the Co sites are not directly related to the epitaxial positions. We propose then a chemically-driven-concerted-atom-exchange (CDCE) mechanism for the transition from chemisorption of Co to epitaxy of CoSi2on Si(111) which explains the coexistence of type A and B epitaxy.
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