We give the first photoemission results on the enhancement of Si reactivity to oxygen when a noble metal (Ag) is present. The tunability of synchrotron radiation (SR) has been used to get high surface sensitivity and to take advantage of cross section energy dependence. We show that when one monolayer of Ag is deposited onto Si(111), the exposure to oxygen (30 Ã 106L) originates the overgrowth of an oxide phase which is basically SiO2. This indicates that Ag breaks the sp3configuration of Si atoms with a consequent dramatic increase in the Si reactivity. This behaviour rules out the model of Ag adsorbed on top of Si with an atomically abrupt interface.
Photoemission investigation on the oxidation of Si(111)Ag interfaces and its relation to the interface structure / G. Rossi, L. Caliari, I. Abbati, L. Braicovich, I. Lindau, W.E. Spicer. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 116:2(1982), pp. L202-L206.
|Titolo:||Photoemission investigation on the oxidation of Si(111)Ag interfaces and its relation to the interface structure|
ROSSI, GIORGIO (Primo)
|Parole Chiave:||Condensed Matter Physics; Surfaces and Interfaces; Surfaces, Coatings and Films; Materials Chemistry2506 Metals and Alloys|
|Settore Scientifico Disciplinare:||Settore FIS/03 - Fisica della Materia|
|Data di pubblicazione:||1982|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/0039-6028(82)90422-8|
|Appare nelle tipologie:||01 - Articolo su periodico|