The partial (s-d) density of empty states at the Cu site in the pseudo-5 x 5 Si(111)/Cu interface has been investigated by polarization-dependent x-ray absorption spectroscopy at the Cu L2,3 edges. The absorption spectra are strongly dichroic showing a metallic edge in the interface plane and a quasigap in the perpendicular direction. The two-dimensional nature of the electron-band states at the pseudo-5 x 5 interface layer is therefore directly probed.

Anisotropic empty electron-band states at the pseudo-5X5 SI(111)/CU interface / M. Sancrotti, M. Sacchi, O. Sakho, G. Rossi. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 44:4(1991), pp. 1958-1961.

Anisotropic empty electron-band states at the pseudo-5X5 SI(111)/CU interface

G. Rossi
Ultimo
1991

Abstract

The partial (s-d) density of empty states at the Cu site in the pseudo-5 x 5 Si(111)/Cu interface has been investigated by polarization-dependent x-ray absorption spectroscopy at the Cu L2,3 edges. The absorption spectra are strongly dichroic showing a metallic edge in the interface plane and a quasigap in the perpendicular direction. The two-dimensional nature of the electron-band states at the pseudo-5 x 5 interface layer is therefore directly probed.
3D transition-metals; x-Ray absorption; inverse photoemission; atomic-structure; diffraction; silicon; spectra; edges
Settore FIS/03 - Fisica della Materia
1991
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/554893
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