A presentation is made of the first evidence of formation of mixed valent compounds at the Si(111)/Yb interface upon annealing. Two stable and uniform compositions were found, these being related to the known bulk silicides YbSi and YbSi//2. The mixed valence behavior is seen in the presence of the strong 4f**1**3 (Yb**3** plus ) signal and in the shift of the 4f**1**4 (Yb**2** plus ) signal to the Fermi level.
Chemical reaction at the annealed Si/Yb interface / G. Rossi, J. Nogami, J.J. Yeh, I. Lindau. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B: MICROELECTRONICS PROCESSING AND PHENOMENA. - ISSN 0734-211X. - 1:3(1983), pp. 530-532. ((Intervento presentato al 10. convegno Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces tenutosi a Santa Fe nel 1983 [10.1116/1.582593].
Chemical reaction at the annealed Si/Yb interface
G. Rossi;
1983
Abstract
A presentation is made of the first evidence of formation of mixed valent compounds at the Si(111)/Yb interface upon annealing. Two stable and uniform compositions were found, these being related to the known bulk silicides YbSi and YbSi//2. The mixed valence behavior is seen in the presence of the strong 4f**1**3 (Yb**3** plus ) signal and in the shift of the 4f**1**4 (Yb**2** plus ) signal to the Fermi level.
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