The growth and the crystalline and electronic structure of Ni deposited on single crystalline Cu(1 1 1) were studied by scanning tunnelling microscopy (STM), grazing incidence X-ray diffraction (GIXD) and angle-resolved photoemission spectroscopy (ARPES). In the early stages of growth monoatomic-high flat Ni islands, partially covered by Cu migrating from the surface, are observed. Starting from a pseudomorphic epitaxial relationship the in-plane lattice parameter progressively relaxes with increasing coverage. For a 20 monolayer (ML) thick deposit the in-plane lattice parameter is still found halfway between the bulk Ni and Cu lattice parameters. ARPES data also rule out the layer-by-layer growth and provide the values of the Ni exchange splitting.
Structural and electronic properties of thin Ni layers on Cu(1 1 1) as investigated by ARPES, STM and GIXD / M. Mulazzi, S. Stanescu, J. Fujii, I. Vobornik, C. Boeglin, R. Belkhou, G. Rossi, A. Barbier. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 600:18(2006), pp. 3938-3942. ((Intervento presentato al 23. convegno European Conference on Surface Science tenutosi a Berlin nel 2005.
|Titolo:||Structural and electronic properties of thin Ni layers on Cu(1 1 1) as investigated by ARPES, STM and GIXD|
ROSSI, GIORGIO (Penultimo)
|Parole Chiave:||synchrotron radiation photoelectron spectroscopy; scanning tunnel microscopy; X-ray scattering; diffraction and reflection; metal-metal magnetic thin film structures|
|Settore Scientifico Disciplinare:||Settore FIS/03 - Fisica della Materia|
|Data di pubblicazione:||2006|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/j.susc.2006.01.104|
|Appare nelle tipologie:||01 - Articolo su periodico|