The tunability of the excitation energy provided by a synchrotron (SR) source, adds a new dimension to electron spectroscopy. Total and partial electron yield techniques allow the study of the absorption and partial photoionization cross-section ( sigma ) of selected electron levels. Solid-state and chemical effects on the sigma of valence electron states, and sigma resonances involving the empty partial density of states (DOS) have been found and represent powerful diagnostics for the spectroscopic study of metal-semiconductor interfaces.
Progress of synchrotron radiation spectroscopy for the study of condensed interfaces: new methods and some results / G. Rossi - In: Physics of Semiconductors : proceedings / [a cura di] J.D. Chadi and W.A. Harrison,. - Prima edizione. - New York : Springer-Verlag, 1985. - ISBN 0387961089. - pp. 149-154 (( Intervento presentato al 17. convegno International Conference on the Physics of Semiconductors tenutosi a San Francisco nel 1984.
Progress of synchrotron radiation spectroscopy for the study of condensed interfaces: new methods and some results
G. RossiPrimo
1985
Abstract
The tunability of the excitation energy provided by a synchrotron (SR) source, adds a new dimension to electron spectroscopy. Total and partial electron yield techniques allow the study of the absorption and partial photoionization cross-section ( sigma ) of selected electron levels. Solid-state and chemical effects on the sigma of valence electron states, and sigma resonances involving the empty partial density of states (DOS) have been found and represent powerful diagnostics for the spectroscopic study of metal-semiconductor interfaces.
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