In the first part of this review a description is presented on the experimental approach to the study of the formation of semiconductor interfaces, with a review of the relevant techniques, and a critical review of the recent experimental results on the formation of d-metal-silicon and f-metal-silicon interfaces. Two prototypes of d-metal interfaces are discussed: Pt-Si and Cu-Si. Unpublished data are discussed along with a review of the literature and in connection with other related systems. The second part is devoted to a systematic review of the investigation on the novel class of rare earth-silicon interfaces.

d and f metal interface formation on silicon / G. Rossi. - In: SURFACE SCIENCE REPORTS. - ISSN 0167-5729. - 7:1-2(1987 May), pp. 1-101. [10.1016/0167-5729(87)90005-7]

d and f metal interface formation on silicon

G. Rossi.
1987-05

Abstract

In the first part of this review a description is presented on the experimental approach to the study of the formation of semiconductor interfaces, with a review of the relevant techniques, and a critical review of the recent experimental results on the formation of d-metal-silicon and f-metal-silicon interfaces. Two prototypes of d-metal interfaces are discussed: Pt-Si and Cu-Si. Unpublished data are discussed along with a review of the literature and in connection with other related systems. The second part is devoted to a systematic review of the investigation on the novel class of rare earth-silicon interfaces.
metal/semiconductor interfaces
Settore FIS/03 - Fisica della Materia
SURFACE SCIENCE REPORTS
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2434/554233
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