In the first part of this review a description is presented on the experimental approach to the study of the formation of semiconductor interfaces, with a review of the relevant techniques, and a critical review of the recent experimental results on the formation of d-metal-silicon and f-metal-silicon interfaces. Two prototypes of d-metal interfaces are discussed: Pt-Si and Cu-Si. Unpublished data are discussed along with a review of the literature and in connection with other related systems. The second part is devoted to a systematic review of the investigation on the novel class of rare earth-silicon interfaces.
d and f metal interface formation on silicon / G. Rossi. - In: SURFACE SCIENCE REPORTS. - ISSN 0167-5729. - 7:1-2(1987 May), pp. 1-101. [10.1016/0167-5729(87)90005-7]
d and f metal interface formation on silicon
G. Rossi
Primo
1987
Abstract
In the first part of this review a description is presented on the experimental approach to the study of the formation of semiconductor interfaces, with a review of the relevant techniques, and a critical review of the recent experimental results on the formation of d-metal-silicon and f-metal-silicon interfaces. Two prototypes of d-metal interfaces are discussed: Pt-Si and Cu-Si. Unpublished data are discussed along with a review of the literature and in connection with other related systems. The second part is devoted to a systematic review of the investigation on the novel class of rare earth-silicon interfaces.File | Dimensione | Formato | |
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