A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4μW and exhibits a measured Temperature Drift of 15ppm/°C for a temperature range of 190°C (-60°C to 130°C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external components such as compensating capacitors. The circuit is radiation hardened by design (RHBD), it was fabricated using TowerJazz Semiconductor's 0.18μm standard CMOS technology and occupies a silicon area of 0.039mm2. The proposed voltage reference is suitable for high-precision and low-power space applications.
A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites / C.M. Andreou, A. Paccagnella, D.M. Gonzalez Castano, F. Gomez, V. Liberali, A.V. Prokofiev, C. Calligaro, A. Javanainen, A. Virtanen, D. Nahmad, J. Georgiou - In: Circuits and Systems (ISCAS), 2015 IEEE International Symposium on[s.l] : IEEE, 2015 May. - ISBN 9781479983919. - pp. 2245-2248 (( convegno IInternational Symposium on Circuits and Systems tenutosi a Lisbon nel 2015 [10.1109/ISCAS.2015.7169129].
A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites
V. Liberali;
2015
Abstract
A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4μW and exhibits a measured Temperature Drift of 15ppm/°C for a temperature range of 190°C (-60°C to 130°C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external components such as compensating capacitors. The circuit is radiation hardened by design (RHBD), it was fabricated using TowerJazz Semiconductor's 0.18μm standard CMOS technology and occupies a silicon area of 0.039mm2. The proposed voltage reference is suitable for high-precision and low-power space applications.
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