A significant chemical stability has allowed us to perform photoelectrochemical measurements on the semiconducting state of the GdMg hydride system. With electrical impedance spectroscopy we confirm that GdMg hydride in the transparent state is an a-type semiconductor. The donor density was estimated to be 5 x 10(21) cm(-3). Impedance measurements give information about the potential distribution at the semiconductor/solution interface. Photocurrent was observed in the transparent state. It is proposed that photoanodic etching of the GdMg hydride at high light intensities occurs along grain boundaries, leading to inhomogeneous destruction of the film,
A photoelectrochemical study of the GdMg hydride switchable mirror / M. Di Vece, P. Van Der Sluis, A.M. Janner, J.J. Kelly. - In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY. - ISSN 0013-4651. - 148:10(2001), pp. G576-G580. [10.1149/1.1401081]
A photoelectrochemical study of the GdMg hydride switchable mirror
M. Di Vece
;
2001
Abstract
A significant chemical stability has allowed us to perform photoelectrochemical measurements on the semiconducting state of the GdMg hydride system. With electrical impedance spectroscopy we confirm that GdMg hydride in the transparent state is an a-type semiconductor. The donor density was estimated to be 5 x 10(21) cm(-3). Impedance measurements give information about the potential distribution at the semiconductor/solution interface. Photocurrent was observed in the transparent state. It is proposed that photoanodic etching of the GdMg hydride at high light intensities occurs along grain boundaries, leading to inhomogeneous destruction of the film,
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